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printing, activating chemicals, or pumping other types of lasers.

In applications where a small focused beam is needed, the waveguide must be made narrow, on the order of the optical wavelength. This way, only a single lateral mode is supported and one ends up with a diffraction-limited beam. Such single spatial mode devices are used for optical storage, laser pointers, and fiber optics. Note that these lasers may still support multiple longitudinal modes, and thus can lase at multiple wavelengths simultaneously.

The wavelength emitted is a function of the band-gap of the semiconductor and the modes of the optical cavity. In general, the maximum gain will occur for photons with energy slightly above the band-gap energy, and the modes nearest the gain peak will lase most strongly. If the diode is driven strongly enough, additional side modes may also lase. Some laser diodes, such as most visible lasers, operate at a single wavelength, but that wavelength is unstable and changes due to fluctuations in current or temperature.

Due to diffraction, the beam diverges (expands) rapidly after leaving the chip, typically at 30 degrees vertically by 10 degrees laterally. A lens must be used in order to form a collimated beam like that produced by a laser pointer. If a circular beam is required, cylindrical lenses and other optics are used. For single spatial mode lasers, using symmetrical lenses, the collimated beam ends up being elliptical in shape, due to the difference in the vertical and lateral divergences. This is easily observable with a red laser pointer.

The simple diode described above has been heavily modified in recent years to accommodate modern technology, resulting in a variety of types of laser diodes, as described below.

Types

The simple laser diode structure, described above, is extremely inefficient. Such devices require so much power that they can only achieve pulsed operation without damage.

Although historically important and easy to explain, such devices are not practical.

Double heterostructure lasers

Diagram of front view of a double heterostructure laser diode

In these devices, a layer of low bandgap material is sandwiched between two high bandgap layers. One commonly-used pair of materials is gallium arsenide (GaAs) with aluminium gallium arsenide (Al

x Ga

(1-x) As). Each of the junctions between different bandgap materials is called a heterostructure , hence the name "double heterostructure laser" or DH laser. The kind of laser diode described in the first part of the article may be referred to as a homojunction laser, for contrast with these more popular devices.

The advantage of a DH laser is that the region where free electrons and holes exist simultaneously—the active region—is confined to the thin middle layer. This means that many more of the electron-hole pairs can contribute to amplification—not so many are left out in the poorly amplifying periphery. In addition, light is reflected from the heterojunction; hence, the light is confined to the region where the amplification takes place.